METHOD AND APPARATUS FOR PULLING UP SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method and apparatus capable of pulling up a single crystal while preventing the adhesion of silicon oxide to the top end of a quartz crucible. SOLUTION: The top end 9 of the quartz crucible 5 is held at >=950 deg.C and the semiconductor single crystal rod 18 is pulled up in the method for pulling up the single crystal; which grows the semiconductor single crystal by pulling up a semiconductor single crystal rod 18 from a semiconductor melt 15 housed in the quartz crucible 5. The apparatus for pulling up the single crystal is provided with a cylinder 10 which is airtightly coupled at the top end to the opening edge at the center of the ceiling of a chamber 1, is pendent at bottom end toward the semiconductor melt 15 in the quartz crucible 5 and coaxially encloses a single crystal rod 18 to be pulled up, and a collar 12 is expanded outer upward and of which the outer peripheral edge extends upward of the top end 9 of the quartz crucible 5 in such a manner that this collar exists in the position where its outer peripheral edge does not come into contact with the top end 9 of the quartz crucible 5 when the quartz crucible 5 exists in the uppermost position.