发明名称 |
Semiconductor device with outer diffusion layer |
摘要 |
A semiconductor device comprises a semiconductor substrate formed with at least one well containing impurity ions of either a first conductivity type or a second conductivity type; a plurality of transistors each having a gate insulation film formed on the well, a gate electrode formed on the gate insulation film and a pair of diffusion layers formed in the well; and an outer diffusion layer of the same conductivity type as that of the well and self-aligned with each of the diffusion layers in an outer periphery thereof within the well; the outer diffusion layer having an impurity concentration sufficient to provide a desired junction withstand voltage and having substantially the same width as that of a depletion layer to be generated when an operational voltage is applied to the corresponding transistor; the impurity of the well being set for a concentration such that a threshold voltage of a parasitic transistor appearing below the gate electrode connecting adjacent transistors is higher than a power supply voltage, whereby the adjacent transistors are isolated from each other.
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申请公布号 |
US5648672(A) |
申请公布日期 |
1997.07.15 |
申请号 |
US19950529977 |
申请日期 |
1995.09.19 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
HASEGAWA, MASAHIRO;TANIMOTO, JUNICHI |
分类号 |
H01L27/08;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108;H01L27/112;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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