| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a susceptor for an epitaxial wafer process in which quick heating is carried out. SOLUTION: A susceptor 10 has an outer supporting ring 14 for supporting a wafer 12. The outer supporting ring 14 is preferably made of a single crystal body of silicon carbide, and more preferably, silicon carbide of high purityβ-phase (face centered cubic). The wafer 12 is supported by a small wafer shoulder portion 26 of the ring 14. In order to prevent adherence to the back surface or the upper surface of the wafer 12, a closing member shoulder portion 28 is provided below the wafer shoulder portion 26 within the ring 14, and a closing member 16 is arranged on the closing member shoulder portion 28. The closing member 16 is preferably made of quartz, and' is simply supported on the closing member shoulder portion 28. In this method, the ring 14 and the closing member 16 are expandable at different rates in the case of quick changes in temperature, and the closing member 16 or the ring 14 is replaceable.</p> |
