发明名称 Method of processing a piezoelectric device
摘要 The following steps are performed when processing electronic components such as piezoelectric devices. At Step 1 inter-atom bond is created between a functional member such as a quartz crystal plate and a first substrate, and the functional member and the quartz crystal plate are directly joined together. At Step 2, the functional member and a second substrate are fixed together with an adhesive agent or by a direct bond. At Step 3, the first substrate is removed chemically or mechanically, with said functional member and said second substrate still being joined together. A step of polishing said functional member for the adjustment of thickness thereof may be done between Step 1 and Step 2. For example, a silicon dioxide thin film may be provided between the functional member and the first substrate. Since no adhesive layer exists between the functional member and the first substrate, this improves the degree of plane of the functional member when joined to the first substrate. Therefore, functional member thickness accuracy becomes extremely high and mass productivity is also improved.
申请公布号 US5647932(A) 申请公布日期 1997.07.15
申请号 US19960601539 申请日期 1996.02.14
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 TAGUCHI, YUTAKA;EDA, KAZUO;KANABOSHI, AKIHIRO;OGURA, TETSUYOSHI;TOMITA, YOSHIHIRO
分类号 H03H3/02;(IPC1-7):H01L21/30;H01L21/304;H01L21/306 主分类号 H03H3/02
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