摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the device which reduces the chip area and finally improves the yield by reducing the area in the device which needs a resistance element. SOLUTION: The semiconductor device comprises a contact window filled with high melting point metal (tungsten film 16) in a semiconductor substrate (p-type silicon substrate 1) with an active element and a passive element to connect the elements to one another, and a contact window filled with a semiconductor layer (polysilicon film 14) to connect the elements to one another, wherein the window filled with the semiconductor layer is connected via wiring metal (AlSiCu film 17) and metal barrier film (barrier metal 15) and the semiconductor layer is functioned as a resistance element, and the resistance value of the layer is 1/10 or less of the contact resistance value with the metal barrier film.</p> |