摘要 |
<p>PROBLEM TO BE SOLVED: To provide an alignment mark structure for a multilayered wiring structure which may prevent noise and provide a detection signal with high accuracy, and its manufacturing method. SOLUTION: In an alignment mark structure for a multilayered wiring structure which is formed by alternately stacking interlayer films 2, 4 and wiring layers 3, 7 on a semiconductor wafer 1, an alignment mark is formed by the interlayer film 4 patterned on a scribing line. In this alignment mark structure, the alignment mark is formed in a state where the lower wiring layer 3 on the scribing line is left.</p> |