Method of and device for in situ real time quantification of the morphology and thickness of a localized area of a surface layer of a thin layer structure during treatment of the latter

摘要

A method for in situ quantification of the morphology and the thickness of a localized area of a surface layer of a thin layer structure entails directing a beam of white light and one or two lazer beams onto a sample enclosed in a vacuum treatment chamber, using a monochromator for a spectral analysis of the white light reflected by the sample and/or differential interferometry with a predetermined wavelength to determine the thickness and the instantaneous rate of variation of the thickness of the surface layer of the sample and to display a monochromatic map of the morphology of the localized area obtained by differential interferometry using a matrix camera. One application is controlling vacuum treatment of thin layer structures, especially semiconductors and integrated circuits, monitoring the morphology, thickness and rate of variation of thickness of the surface layer of the treated sample in situ and in real time.