| 摘要 |
PROBLEM TO BE SOLVED: To simplify the manufacture and improve electrical characteristic by forming insulating film spacers to both side surfaces of a capacitor electrode pattern through etch back of the insulating film evaporated in the predetermined thickness. SOLUTION: An upper electrode, high dielectric material film, a lower electrode and diffusion preventing film are sequentially etched by the unisotropic dry processing method utilizing the predetermined mask pattern PR to form the electrode patterns 31A, 32A, 33A, 34A of the capacitor isolated in unit of cell. Next, an insulating film is evaporated in such a thickness that the capacitor electrode patterns 31A, 32A, 33A, 34A can sufficiently be coated. Thereafter, the etch back process is executed so that the insulating film coated on the upper electrode pattern 34A is removed perfectly to form an insulating film spacer 36a. Thereby, the stepped portion is formed at the external circumference of the upper electrode pattern 34A, a leak current is reduced and a high dielectric material capacitor having excellent electrical characteristic can be obtained. |
