| 摘要 |
PROBLEM TO BE SOLVED: To provide a conductive structure and its creating method for the interconnection wirings of integrated circuit chips. SOLUTION: A conductive structure comprises a bonding layer M18 made of Ti, Zr, Hf, V, Nb, Ta, W and the alloys thereof and a layer 20 made of Al-rare earth element alloy or Al-Y alloy. These layers can be united into one layer by a heat treatment. Further, adding a layer 22 made of AlCu, AlCuSi, or AlCuGe alloy to the conductive structure, the layer 22 and a layer present under the conductive structure can be formed into one layer by a heat treatment. By reducing the generation of MAl3 or other M aluminide, the problem of polishing these is overcome, and by reducing the size of polishing chip, the problem of generating scratches and the problem of performing a Cu-plating in the course of polishing are respectively overcome. |
