| 摘要 |
An improved output control circuit for a semiconductor memory keeping a certain dependent relationship between a data outputted from a sense amplifier and a latch enable signal when a sense amplifier output detecting unit detects a state change of a node, which includes a sense amplifier output detecting unit for initializing and enabling a sense amplifier to have a certain state when the sense amplifier is in an equalizing state in accordance with voltage applied thereto and for detecting whether voltage levels of both output nodes of the internal amplifying unit are different; a delay unit for delaying an output signal of the sense amplifier output detecting unit for a predetermined time; and an output control unit for outputting an output signal of the delay unit when the sense amplifier is enabled.
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