ROW REDUNDANCY DEVICE OF SEMICONDUCTOR MEMORY

摘要

A row redundancy device of semiconductor component is disclosed. The row redundancy device comprises plural cell array sub blocks selected by a row address, plural repair fuse boxes programming the address which selects a defect word line, and a redundancy driver outputting a repair operation signal by mixing more than two of the plurality of repair fuse box and commonly appling one row address among the row addresses for selecting the plurality of the cell array sub blocks to more than two sub blocks selected by a different mix of the address whose operation is not varied according to a refresh rate. Thus, 1K refresh has the same row repair efficiency as 4K refresh and the row repair speed is improved.