| 摘要 |
A photoresponsive device (10) includes a body comprised of semiconductor material comprised of elements selected from Group IIB-VIA; and at least one electrically conductive contact pad (20) formed over a surface of the semiconductor material. The at least one electrically conductive contact pad is comprised of metal nitride, such as MoN, and serves as a diffusion barrier between an Indium bump (22a, 22b) and the underlying semiconductor material. A passivation layer (18), such as a layer of wider bandgap CdTe, can be formed to overlie the surface of said semiconductor material. A p-n junction is contained within a mesa structure (10a) that comprises a portion of an n-type base layer (14) and a p-type cap layer (16). A first contact pad is disposed over the cap layer and a second contact pad is disposed over the base layer. The device further includes a first layer (24a) comprised of Au that is disposed between a bottom surface of the first contact pad and the cap layer; a second layer (24b) comprised of Cr that is disposed between a bottom surface of the second contact pad and the base layer; and a third layer (26) comprised of nickel that is disposed upon a top surface of the first and second contact pads. A first In bump (22a) is disposed upon the third layer over the first contact pad and a second indium bump (22b) disposed upon the third layer over the second contact pad. The metal nitride is applied, preferably, by a reactive sputtering technique.
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