MANUFACTRUING METHOD FOR FIELD EFFECT TRANSISTOR TYPE SEMICONDUCTOR DEVICE

摘要

A fabrication method of FET(field effect transistor) is provided to prevent spiking phenomenon generating of junction between a silicon substrate and a metal wire. The method comprises the steps of: forming a pad oxide(22) and a nitride pattern(23) on ac active region of a substrate(21); forming an epitaxial silicon pattern(26') overlapped a field oxide(24); forming a gate electrode(28'); ion-implanting of low concentration the epitaxial pattern(26') to form an LDD(lightly drain region); forming a spacer(29) at both sidewalls of the epitaxial silicon pattern and the gate electrode(28'); and implanting of high concentration the epitaxial pattern(26') to form heavily doped source and drain region(30).