| 摘要 |
The present invention relates to a method of forming a conductive film of semiconductor integrated circuit which prevents pattern degradation. This method includes the steps of forming a field oxide film (2) and a gate insulating film (3) on a semiconductor substrate (1), and forming a conductive film all over the surface, and selectively etching the same to form a preliminary gate electrode and word line (4F); implanting relatively low density impurities; forming a space insulating film (5) by deposition and anisotropic etching, and implanting relatively high density impurities, thus forming an LDD active region (6'); planarizing with an insulating film (7) and selectively etching the insulating film (7) and preliminary gate electrode and word line (4F) and forming a gate electrode and word line (4') at the same time.
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