| 摘要 |
Charge storing electrode manufacturing method for the capacitor, comprising the steps of: generating the contact hole, generating the doped amorphous silicon film and the undoped amorphous silicon film, alternatively, depositing the CVD oxidation film, opening the proper area, generating the undoped amorphous silicon film again, patterning the film into the mask for the charge storing electrode, and then generating the charge storing electrode of the pin structure using the etching selection ratio.
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