发明名称 Plasma processing apparatus
摘要 A plasma processing apparatus comprises means of supplying the microwave, a reaction chamber having a microwave lead-in opening, a microwave window for introducing the microwave provided by the microwave supply means into the reaction chamber through the microwave lead-in opening, and a supporting member having beams for supporting the microwave window. The apparatus has its microwave window divided in correspondence to areas of the supporting member divided by the beams. The apparatus can have a larger microwave window which is reinforced by the beams against the pressure at plasma generation, and is capable of processing large semiconductor substrates and glass substrates for liquid crystal display panels stably and uniformly.
申请公布号 US5645644(A) 申请公布日期 1997.07.08
申请号 US19950546342 申请日期 1995.10.20
申请人 SUMITOMO METAL INDUSTRIES, LTD. 发明人 MABUCHI, HIROSHI;YOSHIKI, TAKAHIRO;KOMACHI, KYOICHI;MIYAMURA, TADASHI
分类号 H01J37/32;(IPC1-7):C23C16/00 主分类号 H01J37/32
代理机构 代理人
主权项
地址