发明名称 |
Semiconductor thin film formed on a supporting substrate |
摘要 |
A semiconductor substrate is provided which has a semiconductor on insulator structure but in which can be formed a thin film integrated circuit having electrical characteristics and microstructure equal to or of greater density than a silicon integrated circuit formed using a bulk single crystal silicon wafer. The semiconductor substrate has a structure which is formed of a sequentially layered single crystal silicon thin film sandwiched between a thermally oxidized silicon film and a silicon oxide or silicon nitride film, an element smoothing layer, a fluoro-epoxy series resin adhesive layer, and a supporting substrate. The single crystal silicon thin film can have integrated circuit devices formed in a sub-micron geometry similar to that of a bulk single crystal silicon. A transparent glass or a bulk single crystal silicon wafer can be used as a supporting substrate. Therefore the semiconductor thin film can integrate a highly fine, dense and compact semiconductor integrated circuit or semiconductor optical element. The semiconductor thin film element has a transparent optical detection region or optical modulation region with 100 million pixels or more.
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申请公布号 |
US5646432(A) |
申请公布日期 |
1997.07.08 |
申请号 |
US19930057987 |
申请日期 |
1993.05.05 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
IWAKI, TADAO;YAMAZAKI, TSUNEO;MATSUSHITA, KATSUKI;SENBONMATSU, SHIGERU;TAKANO, RYUICHI |
分类号 |
G02F1/136;G02F1/1362;G02F1/1368;G06E3/00;H01L21/02;H01L21/20;H01L21/304;H01L21/336;H01L21/762;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L27/01;H01L31/032;H01L29/00;H01L23/48 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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