POLISHING METHOD WITH CHEMICAL MACHINE FOR ALUMINUM OR ALUMINUM ALLOY

摘要

PROBLEM TO BE SOLVED: To provide a method to remove aluminum from a semiconductor wafer through chemical machine polishing and remain a wiring pattern thereon. SOLUTION: A surface of aluminum in water environment is formed of an aluminum oxide hydrate and when the surface makes contact with silica hydrate particles of polishing slurry at neutral pH, alumina on the surface is carried to a silica surface through formation of aluminosilicate and alumina is removed togetherwith an alumina layer through contact chemical reaction. A so polished wafer has an insulation substance surface on which an aluminum wire substantially freed from scratch and corrosion is formed.