STRUCTURE OF RESONANT TUNNELING OPTO-ELECTRONIC DEVICE

摘要

The present invention relates to the operating mechanism of a resonant tunneling opto-electronic device and its vertical structure using the characteristics that resonant tunneling diode's peak laterally moves by light. In this device, an n-type 2 x 1018cm-3 GaAs buffer layer (1) is formed to a thickness of 10000ohm.strong on an n-type GaAs substrate, and a 4 x 1017cm-3 doped n-type GaAs interval layer (2) and a GaAs interval layer (3) of 100ohm.strong are formed thereon. An undoped AlAs layer of 100ohm.strong is symmetrically grown thereon as a quantum barrier (4) to reduce non-resonant tunneling current. An undoped In(0.2)Ga(0.8)As layer of 45ohm.strong is grown between the barrier (4) as a quantum well (5) to increase current amount, and an interval layer (6) is formed by undoped GaAs to a thickness of 500ohm.strong to increase voltage drop in the double barrier quantum well structure. A window layer (7) of doped n-type GaAs is formed to a thickness of 500ohm.strong, and a window layer (8) is formed to a thickness of 500ohm.strong with 2 x 1018cm-3 doped GaAs and Al (40%). In addition, a window layer (7) is formed to a thickness of 5000ohm.strong with 2 x 1018cm-3 doped Al(0.4)Ga(0.6)As.