SEMICONDUCTOR LASER DEVICE USING POROUS SILICON

摘要

An optic pumping surface emitting semiconductor laser device of vertical resonance type using a porous silicon which a light emitting layer is inserted between the upper and lower mirror layer thereof comprises a bragg reflecting plate of a first dielectric(4), a bragg reflecting plate of a second dielectric(5), a gain layer(1), a silicon substrate(3), a unreflecting layer(2), a metal mirror layer(6) and a phase accordance layer(7). The bragg reflecting plate of a first dielectric(4) is used as the upper mirror layer. The bragg reflecting plate of a second dielectric(5) is used as the lower mirror layer. The gain layer(1) which uses a porous silicon is inserted between the bragg reflecting plate of the first dielectric(4) and the bragg reflecting plate of the second dielectric(5) being used as an light emitting layer. The silicon substrate(3) is used to making the porous silicon. The non diffused reflecting layer(2) protects a diffused reflection due to a jag on the surface of the porous silicon. The metal mirror layer(6) increases a reflection rate beneath the bragg reflecting plate of the second dielectric(5). The phase accordance layer(7) accords the phase of each reflection wave generated between the bragg reflecting plate of the second dielectric(5) and the metal mirror layer(6).