Power semiconductor module with parallel IGBT chips

摘要

The power semiconductor module has at least two insulated gate bipolar transistor chips (3,4) which are connected in parallel and positioned adjacent one another along a conductor path (2). The conductor path is applied to an insulating substrate (1). The collector contacts of the IGBT chips are electrically and mechanically coupled to the first conductor path. The IGBT emitter contacts (8) are coupled to a second conductor path (5) and are directly coupled to emitter contacts of neighbouring IGBTs via further connection lines (14), e.g. bonding wires.