Semiconductor component manufacturing method for lightly doped drain MOSFET

摘要

The method involves defining a field region and an active region on a reduced doping concentration p-type semiconductor substrate (40). In the field region (A) is formed an n-type region (44) and high doping concentration within the substrate and coated by a field insulation film (45). A gate is formed in the active region by deposition of a gate insulating film (47). A case electrode (48) and a first insulation film (49), and subsequent structuring. On the substrate structure surface is deposited a second insulation film (50), also covering the field insulation and the first insulation films. On the second insulation film is formed a third one such that it extends slightly into the active region. Between the gate electrode and the field insulation film is formed an n-type region with high impurity concentration. The gate electrode and field insulation film are used as implantation masks for specified ion implantation.