| 摘要 |
<p>In a laser anneal processing for an amorphous silicon film (30) formed on the surface of a substrate (20), a line beam L0 whose laser beam irradiation area L4 is elongated in an X direction and whose half width in a laser beam intensity profile in the Y direction is narrower than a pixel pitch in the Y direction is applied to the silicon film (30). When the position of the line beam L0 is fixed and the substrate (20) is moved by a stage in the Y direction, the moving speed is decreased when the line beam L0 irradiates a formation area A1 of a TFT (10) in the active matrix portion, and is increased when it irradiates other unnecessary portions. When a formation schedule area A2 of a data driver portion (7) is irradiated, this area is annealed by a laser as a whole because the TFTs (10) are arranged in a complexed way.</p> |
