| 摘要 |
<p>A semiconductor storage device comprising a memory cell having a pair of transfer gate transistors, a pair of drive transistors, and a pair of resistive elements or thin film transistors and having a flip-flop structure by cross-coupling using a load of the pair of transfer gate transistors and the pair of resistive elements or thin film transistors. A diffusion layer (61) is provided in a contact region in the surface of a semiconductor substrate (51) and the first-layer polysilicon wiring (65) of the driver transistor facing the diffusion layer (61) in the flip-flop is directly connected to the diffusion layer (61).</p> |
