Non-volatile memory cell device, e.g. ROM cell

摘要

The device includes p-type conductivity substrate (11) in whose preset part is formed an active region with n-type source (12) and drain (13) regions and a p-type channel (14) region. Between the source and drain, on the substrate surface is formed a floating gate (16). The floating gate has a reversed, T-shaped structure, and a control gate (17) is located on the floating gate structure. Preferred the active region and control gate are mutually orthogonal. Between the substrate and floating gate extends a thin gate insulating film (18), permitting electron tunnelling.