| 发明名称 |
Improvements in or relating to semiconductors |
| 摘要 |
A method is provided for silicon oxide etching for semiconductor manufacture including rinsing an etched silicon wafer by conducting a stream of deionized liquid water onto a spinning silicon wafer and contacting the deionized water with anhydrous hydrogen fluoride gas, hydrogen chloride gas, ozone, or mixtures thereof. <IMAGE>
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| 申请公布号 |
EP0782177(A2) |
申请公布日期 |
1997.07.02 |
| 申请号 |
EP19960120770 |
申请日期 |
1996.12.23 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED;FSI INTERNATIONAL, INC. |
发明人 |
FRYSTAK, DAVID C.;WISE, RICK L.;GROTHE, PHILLIP A.;SYVERSON, DANIEL J.;BARNETT, JOEL M. |
| 分类号 |
H01L21/306;H01L21/304;H01L21/311;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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