发明名称 A single crystal growing apparatus
摘要 <p>In a single crystal growing apparatus which pulls a semiconductor single crystal rod 14 from a semiconductor melt 13 contained in a quartz crucible 5 to grow the semiconductor single crystal, quartz crucible 5 is designed such that it can move up and down so as to maintain the level of semiconductor melt 13 constant and a main heater 7 which can move up and down and a subheater 10 which can move up and down are provided to heat semiconductor melt 13 so that the thermal environment of semiconductor melt 13 is maintained substantially constant. <IMAGE></p>
申请公布号 EP0781868(A2) 申请公布日期 1997.07.02
申请号 EP19960120852 申请日期 1996.12.23
申请人 SHIN-ETSU HANDOTAI COMPANY LIMITED 发明人 YAMAGISHI, HIROTOSHI;TAKANO, KIYOTAKA;KIMURA, MASANORI
分类号 C30B15/14;C30B29/06;H01L21/208;(IPC1-7):C30B15/14 主分类号 C30B15/14
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