Dynamic random access memory having a stacked fin capacitor with reduced fin thickness

摘要

A method for fabricating a dynamic random access memory, wherein during the fabrication an insulation layer and an etching stopper layer are deposited on a semiconductor substrate and a conductor layer is formed on the insulation layer. The conductor layer is patterned to form a capacitor electrode (50). Thereafter, the insulation layer is removed by an etching process and a dielectric film is deposited on the capacitor electrode. An opposing electrode buries the capacitor electrode. The insulation layer is removed by an dry etching process using a vapor mixture of HF and H2O conducted intermittently in the form of a plurality of etching steps with an intervening drying process interposed between the etching steps.