发明名称 SURFACE MOUNT AND FLIP CHIP TECHNOLOGY
摘要 An integrated circuit chip has full trench dielectric isolation of each portion of the chip. A heat sink cap (100) is attached to a diamond passivation layer (96) on the substrate front side surface. The passivation layer is a CVD diamond film which provides both electrical insulation and thermal conductivity. In a flip chip version, frontside electrical contacts (174a, 174b) extend through the frontside passivation layer to the heat sink cap. In a surface mount version, vias are etched through the substrate, with surface mount posts (90a, 90g) formed on the vias, to contact the frontside electrical contacts and provide all electrical contacts on the substrate backside surface. The wafer is then scribed into die in both versions without need for further packaging.
申请公布号 EP0707741(A4) 申请公布日期 1997.07.02
申请号 EP19950918863 申请日期 1995.05.04
申请人 SILICONIX INCORPORATED 发明人 CHANG, MIKE, F.;OWYANG, KING;HSHIEH, FWU-IUAN;HO, YUEH-SE;DUN, JOWEI;FUESSER, HANS-JUERGEN;ZACHAI, REINHARD
分类号 H01L21/822;H01L23/29;H01L23/367;H01L23/373;H01L23/48;H01L23/485;H01L27/04 主分类号 H01L21/822
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