| 摘要 |
<p>A circuit for switching between supply voltages and in particular for non-volatile flash memory devices and of the type comprising a first and a second circuit branch each incorporating a pair of transistors (MA,MB;Mc,MD) connected in series provides that at least one branch (2) of the circuit be structured with a bridge circuit made up of P-channel MOS transistors. The bridge is made of a first (5) and a second (4) pairs of transistors (M1,M2,M3,M4) connected between a first supply voltage reference (SUPPLY1) and a common node (D). The first pair (5) comprises transistors (M1,M2) bigger than the transistors (M3,M4) of the second pair (4) while between the transistors (M3,M4) making up the second pair (4) is inserted a pair of resistors (R1,R2). Between the pair of resistors (R1,R2) there is an interconnection node (F) connected to a corresponding interconnection node (E) between the transistors (M1,M2) of the first pair (5). <IMAGE></p> |
