Method for manufacturing a surface emitting laser

摘要

The surface emission semiconductor laser is formed on a III-V substrate, e.g. of GaAs or InP, with a resonant cavity defined by mirrors (11,15) and containing an active layer (CA). There is also an electrical confinement layer. The formation of this electrical confinement layer includes three stages, the first being the growth of a localised aluminium alloy layer (4) above the active layer (CA) with the exception of an aperture region (8) above which one of the mirrors is formed (11). The second stage includes a resumption of the epitaxial growth of the doped substrate (9), and the third stage includes lateral oxidation of the localised aluminium alloy layer. This final stage may be preceded by a lateral etching process allowing the separation of the periphery (12) of the aluminium alloy layer (4).