发明名称 Semiconductor integrated circuit
摘要 <p>In a case where a plurality of outputs are connected and used, even when a voltage higher than the power-supply voltages inside the integrated circuit is applied to the signal output terminal, the reliability of the internal elements is prevented from deteriorating. The semiconductor integrated circuit includes a PMOS transistor (P6) that has its source potentially isolated from its back gate and has one end of the current path between its source and drain connected via a transistor switch (P5) to the signal output terminal (IO). The integrated circuit generates a control signal having a value proportional to the voltage at one end of the current path between the source and drain of the PMOS transistor (P6), supplies the generated control signal to the gate of the PMOS transistor (P6), and controls the voltage of the control signal so that the potential difference between one end of the current path between the source and drain and the gate of the PMOS transistor may be within a desired range of values when the PMOS transistor (P6) is set in the on state by the control signal. &lt;IMAGE&gt;</p>
申请公布号 EP0782269(A2) 申请公布日期 1997.07.02
申请号 EP19960118387 申请日期 1996.11.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIGEHARA, HIROSHI;IWAMOTO, YOSHIHIRO
分类号 H03K19/003;(IPC1-7):H03K19/003 主分类号 H03K19/003
代理机构 代理人
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