发明名称 |
Application of thin crystalline Si3N4 liners in shallow trench isolation (STI) structures |
摘要 |
Silicon integrated circuits use a crystalline layer of silicon nitride (Si3N4) in shallow trench isolation (STI) structures as an O2-barrier film. The crystalline Si3N4 lowers the density of electron traps as compared with as-deposited, amorphous Si3N4. Further, a larger range of low-pressure chemical-vapor deposited (LPCVD) Si3N4 films can be deposited, providing a larger processing window for thickness controllability. An LPCVD-Si3N4 film is deposited at temperatures of 720 DEG C. to 780 DEG C. The deposited film is in an amorphous state. Subsequently, a high-temperatures rapid-thermal anneal in pure nitrogen or ammonia is conducted at 1050 DEG C. to 1100 DEG C. for 60 seconds.
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申请公布号 |
US5643823(A) |
申请公布日期 |
1997.07.01 |
申请号 |
US19950531844 |
申请日期 |
1995.09.21 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HO, HERBERT;HAMMERL, ERWIN;DOBUZINSKY, DAVID M.;PALM, J. HERBERT;FUGARDI, STEPHEN;AJMERA, ATUL;MOSEMAN, JAMES F.;RAMAC, SAMUEL C. |
分类号 |
H01L21/76;H01L21/3105;H01L21/318;H01L21/32;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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