发明名称 Integrated circuit with improved immunity to large metallization defects
摘要 The integrated circuit tolerant of large manufacturing defects comprising a first plurality of first conductors made of a first material with relatively low conductivity and each having a plurality of first electrical connection points arranged along itself and a second corresponding plurality of second conductors made of a second material with relatively high conductivity and each having a plurality of second electrical connection points arranged along itself and said plurality of first points are electrically connected to said plurality of second points respectively in such a manner as to reduce the series resistance of the first conductors and the second conductors are interrupted between some second consecutive points in such a manner as to leave relatively large areas of the integrated circuit not traversed by the second conductors.
申请公布号 US5644526(A) 申请公布日期 1997.07.01
申请号 US19950538302 申请日期 1995.10.02
申请人 SGS-THOMSON MICROELECTRONICS S.R.L. 发明人 MAZZALI, STEFANO
分类号 H01L23/528;H01L27/115;(IPC1-7):G11C5/02;G11C5/06;G11C11/34;G11C11/50 主分类号 H01L23/528
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