发明名称 |
Integrated circuit with improved immunity to large metallization defects |
摘要 |
The integrated circuit tolerant of large manufacturing defects comprising a first plurality of first conductors made of a first material with relatively low conductivity and each having a plurality of first electrical connection points arranged along itself and a second corresponding plurality of second conductors made of a second material with relatively high conductivity and each having a plurality of second electrical connection points arranged along itself and said plurality of first points are electrically connected to said plurality of second points respectively in such a manner as to reduce the series resistance of the first conductors and the second conductors are interrupted between some second consecutive points in such a manner as to leave relatively large areas of the integrated circuit not traversed by the second conductors.
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申请公布号 |
US5644526(A) |
申请公布日期 |
1997.07.01 |
申请号 |
US19950538302 |
申请日期 |
1995.10.02 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
MAZZALI, STEFANO |
分类号 |
H01L23/528;H01L27/115;(IPC1-7):G11C5/02;G11C5/06;G11C11/34;G11C11/50 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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