Semiconductor memory apparatus having sense amplifiers connected to both ends of a pair of bit lines

摘要

An improved memory driving method for a semiconductor memory apparatus capable of achieving a series of data accesses by connecting two sense amplifying units to a pair of bit lines, which includes the steps of a first step which senses a data of a memory cell selected by a word line driver and stores the thusly sensed data into a first sense amplifying unit in accordance with a switching operation of a first switch; a second step which selects another memory cell during a sensing operation of the first sense amplifying unit and stores a data of the memory cell into a second sense amplifying unit in accordance with a switching operation of a second switch; and a third step which records data stored in the first sense amplifying unit and second sense amplifying unit into selected memory cells, respectively, in accordance with a certain line and a switch signal, so that data access time of the system can be advantageously reduced.