High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes

摘要

A high voltage bipolar transistor comprises: a collector disposed on a substrate; a base disposed on a first portion of the collector; an emitter disposed on the base; an emitter contact disposed on the emitter; a first support dielectric layer disposed on a second portion of the collector and a portion of the base; a field termination electrode disposed on the first support dielectric layer that contacts the collector; a second dielectric layer disposed over the field termination electrode; a thick dielectric layer disposed over exposed portions of the second dielectric layer, the first support dielectric layer, the emitter, and the emitter contact, and wherein the thick dielectric layer has openings therein at locations for a bond pad, pad interconnect, and base and emitter contacts; a bond pad disposed in an opening above the first support dielectric layer and field termination electrode and which is disposed on the thick dielectric layer and contacts the base to thereby prov ide a structure in which the bond pad overlaps the field termination electrode with a dielectric layer therebetween whereby electric field is prevented from penetrating into the substrate. The thick dielectric layer pref. comprises polyimide.