发明名称 Solid state image sensor
摘要 Signal charges are photoelectrically generated by a plurality of photodiodes, transferred through a transfer register to a charge detection capacitance and sensed through a floating junction, as a potential change of the charge detection capacitance to be amplified and output at an output amplifier composed of a plurality of stages of driver transistors, in which a field insulation film of a first stage driver transistor is formed, under a gate electrode, with a trapezoidal region left so that the gate electrode has a width thereof varied to be wider at a source end than at a drain end, permitting an increased reduction of the charge detection capacitance.
申请公布号 US5644121(A) 申请公布日期 1997.07.01
申请号 US19950568930 申请日期 1995.12.07
申请人 NEC CORPORATION 发明人 NAKANO, TAKASHI;KOHNO, AKIYOSHI;ORIHARA, KOZO
分类号 H01L21/339;H01L27/148;H01L29/762;H04N5/335;H04N5/357;H04N5/369;H04N5/3728;H04N5/378;(IPC1-7):H01J40/14 主分类号 H01L21/339
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