| 摘要 |
<p>PROBLEM TO BE SOLVED: To control the temperature of a semiconductor substrate with high precision, during plasma-processing the semiconductor substrate. SOLUTION: A semiconductor substrate W is put on a sample stage 3 provided with a cooling means 9 and a heating means 8, and the semiconductor substrate W is processed by generating a plasma P, adjusting the temperature of the sample stage 3 by the cooling means 9 and the heating means 8 and adjusting the temperature of the semiconductor substrate W. The degree of heating by the heating means 8 is lowered by an amount set beforehand when the plasma P is generated, and the degree of heating is returned to its original value at the end of the generation of the plasma P.</p> |
