| 摘要 |
PROBLEM TO BE SOLVED: To rapidly and stably operate a sense circuit of a next stage by adding a CMOS positive feedback preamplifier circuit to a common data line and rapidly enlarging the potential difference of the common data line. SOLUTION: A pulse is applied toϕCDQ,ϕCDQ-bar in signal transit period of d, d-bar, and Q202, Q203 are conducted temporarily, and the signal transition of and d, d-bar are performed. Then, when a signal potential difference by a newly selected memory cell starts to occur on the d, d-bar, Q204, Q205 are conducted by pulsesϕCDA.ϕCDA-bar, and a PFB1 is operated. Thereafter, after sense operation after the next stage is ended, the Q204, Q205 are made non-ocuductive by theϕCDA.ϕCDA-bar, and the DFB1 isn't operated. Then, the signal read out from an SRAM memory cell through a Y direction switch is transmitted to the common data lines d, d-bar through direct connection between the input signal of the PFB1 and an output signal line.
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