| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride group compound semiconductor chip excellent in productivity by laminating gallium nitride compound semiconductor layers on a substrate made of a high-melting point material having a melting point above a specific value through a buffer layer. SOLUTION: Gallium nitride compound semiconductor layer 3 are formed on a substrate which is a glass substrate or a polycrystalline substrate made of a high-melting point material having a melting point above 1200 deg.C through a buffer layer 2. ZnO is used for the buffer layer 2. And, as for the gallium nitride compound semiconductor layers 3, an AlN layer is used for a buffer 3-1, an Si-doped GaN layer is used for an n-type clad layer 3-2, a Zn-doped InGaN layer is used for an active layer 3-3 and an Mg-doped GaN layer is used for a p-type clad layer 3-4 respectively. Thereby, optical characteristics and electric characteristics of a chip can be improved. |
