| 摘要 |
PROBLEM TO BE SOLVED: To form a dielectric thin film in a capacitor of a semiconductor device. SOLUTION: Each surface of a lower electrode 52 is inclined by a predetermined upward angle θ with respect to a silicon substrate as a semiconductor substrate. The inclination θ is preferably 45 deg.. To manufacture this capacitor, an interlayer insulating film 51, an electrode material and a resist pattern are formed on the semiconductor silicon substrate, and then the resist pattern and the electrode material are etched. Since a groove is formed by the resist pattern, the lower electrode layer 52 having surfaces inclined with respect to the surface of the semiconductor silicon substrate is formed by etching, and a dielectric film 53 and an upper electrode layer are formed thereon. |
