| 摘要 |
PROBLEM TO BE SOLVED: To prevent a short-circuit current from flowing and improve the yield even if a foreign matter is formed between a main word line and a bit line to cause short-circuiting. SOLUTION: This device has a memory cell array block 10 including a normal memory cell 16. A main line selecting means 40 has a 1st setting means 42 which inactivates the main word line 30, which is activated at a low level potential and inactivated at a high level potential, at a potential nearly equal to that of the precharged bit line BL.BL, and a subordinate line selecting means 50 has a 2nd setting means 52 which activates a subordinate word line 32 when the main word line 30 is at a high level potential. The 2nd setting means 52 has an inverting element 54 which inputs the signal of the main word line 30 and outputs its inverted signal and a switch means 55 which inactivates the subordinate word line 32. Consequently, even if a short circuit S is formed, no short-circuit current flows. |
