| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which comprises a low life time layer selectively formed in a drain region to prevent fluctuations in device characteristics caused by Fe pollution even when the device is kept at high temperature for a long time. SOLUTION: 10<17> atoms/cm<3> of impurities are deposited on one major surface of an N type drain region 11 and diffused by 10μm thereinto to form a P type anode region 12, on which an anode metallic electrode 19 is formed. Formed on the other major surface of the N type drain region 11 by an ion implantation technique or the like are a P type base region 13 and an N type source region 14. Further formed on the other major surface is a gate electrode 16 through a gate oxide film 15. Formed on the gate electrode 16 is a metallic gate electrode 17 as connected thereto. Provided on the source and base regions 14 and 13 is a source metallic electrode 18 which short-circuits the both. A low life time layer 20 is selectively provided in the N type drain region 11.
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