| 摘要 |
PROBLEM TO BE SOLVED: To reduce the cost of a memory product by increasing the number of cells connected to a bit line, reducing the number of whole sense amplifiers and reducing the tip area. SOLUTION: Low-order bit lines (SB1i, SB2i, 1<=i<=m) are connected respectively to high-order bit lines (MB1, MB2) through a low-order bit line block selection means whose operation is controlled by block signals (BSi, 1<=i<=m). Then, a high-order bit line separation switch means whose operation is controlled by high-order bit line separation signals (MBSj, 1<=j<=n) is placed between two low-order bit line blocks. Then, the high-order bit line is bisected by the high-order bit line separation means. |
