| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of forming an element isolation film, which is superior in isolation characteristics, in a simple treating process. SOLUTION: An oxide film 22 for buffer use is formed on the whole surface of a semiconductor substrate 20 and an antioxidation film 24 is formed on the film 22. This film 24 is patterned to form an antioxidation film pattern 24a having a hole, through which the film 22 on an insert region is made to expose, and the film 22 exposed through this hole is wet-etched, whereby an undercut is formed between the pattern 24a and the substrate 20. An oxidation-resistant material layer is formed on the whole surface of the substrate, which is a resultant material, and the oxidation- resistant material layer, which is formed on the upper part and sidewall part of the pattern 24a and the inert region, is removed, whereby a pattern of the above oxidation- resistant material layer is left in the undercut. The substrate, which is the result material, is exposed to an oxidizing atmosphere to form an element isolation film on the inert region. After a pattern of an oxinitride film 26 is formed on the edge part of an active region, the generation of a bird's beak is reduced for forming an element isolation film on the active region and the film 24 is formed of a material film, which is superior in the selectivity of etching to the film 22, whereby a damage to the substrate 20 is reduced.</p> |
