| 摘要 |
A transistor structure using three masks is disclosed. The structure comprises: a gate electrode(2) and a pixel electrode(3) made of an ITO(indium tin oxide) conductive material formed on a glass substrate(1); a chrome electrode(4) formed on the gate electrode(2); an insulating layer(5,10), a silicon film(6) and an N-type silicon layer(7) sequentially formed on the resultant structure; a contact hole to expose a portion of the pixel electrode(3); and a source and drain electrodes(8,9) formed on the resultant structure. Thereby, it is possible to simplify the process using three masks.
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