| 摘要 |
<p>A thin film infrared sensor and a manufacturing process thereof capable of preventing a membrane from being destroyed during making the membrane and improving a sensitivity of a sensor by coating a polyimide film on a thin film infrared sensor are disclosed. A lower electrode(24) is formed on a silicon substrate(20). A rear surface of the silicon substrate(20) is etched. A ferroelectric thin film(25) for infrared sensing is grown and an upper electrode(34) is deposited to form a sensor. A polyimide film(35) is coated on the sensor and serves to protect an element and stabilize a membrane.</p> |
