| 摘要 |
PROBLEM TO BE SOLVED: To control the position of a self-formed quantum box accurately by forming an opening part and a dent in the main surface of the first semiconductor substrate, growing the second semiconductor having the larger lattice constant than the first semiconductor on the substrate and forming the minute semiconductor structure comprising the semiconductor grown in the indentation. SOLUTION: A dent 4, whose position is controlled, is formed in the first semiconductor substrate by the means such as lithography and etching. The depth of the dent 4 is made shallower than the height of a quantum box 3 to be manufactured. The size of the opening part of the dent at the substrate surface is made smaller than the bottom surface of the quantum box 3 to be manufactured. Then, by growing the second semiconductor having the larger lattice constant than the first semiconductor on the substrate, the quantum box 3 having the uniform size is manufactured accurately at the position of the dent. Furthermore, this dent 4 or the groove is constituted of the plane, wherein at least one of integers (l), (m) and (n) expressing the high-order exponents (l, m and n) is larger than 1. |
