SURFACE TREATMENT OF CAPACITOR IN SEMICONDUCTOR

摘要

A fabrication method of capacitors having HSH(hemi-spherical grain) is provided to improve the property of capacitor. The method comprises the steps of: forming a insulating layer(1) having contact holes(2); depositing a polysilicon storage node(3) and an oxide layer(4) on the semi-finished structure; forming an HSG layer(5) by annealing an amorphous silicon; selective etching the HSG layer(5), the oxide layer(4) and the polysilicon storage node(3); and partially etching the remained oxide layer(4) and polysilicon storage node(3) using the remained HSG layer(5) as an etching stopper and using plasma etcher contained HBr gas, thereby forming stacked capacitor of good quality by removing the sharp convex and concave remained the surface of the storage node.