| 摘要 |
A fabrication method of cylindrical storage electrode is provided to improve the capacitance of capacitor. The method comprises the steps of: forming a first conductive layer(9) on a silicon substrate(1) having an MOS transistor; forming a storage pad(9A) by etching the first conductive layer(9); exposing the storage pad(9A) by etching CVD oxide layers(10A, 10B, 10C); depositing a second conductive layer(13) on the entire surface and forming a side-wall(13A) by poly spacer etching; wet etching to remove the CVD oxide layers(10A, 10B, 10C); and forming a wrinkled cylindrical storage electrode including the storage pad(9A) and the side-wall(13A). Thereby, it is possible to increase the effective surface area of capacitor.
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